Designed for upper-level undergraduate and graduate courses, Principles of Semiconductor Devices, Second Edition, presents the semiconductor-physics and device principles in a way that upgrades classical semiconductor theory and enables proper interpretations of numerous quantum effects in modern devices. The semiconductor theory is directly linked to practical applications, including the links to the SPICE models and parameters that are commonly used during circuit design. INDICE: Contents; PART I INTRODUCTION TO SEMICONDUCTORS; 1: lNTRODUCTION TO CRYSTALS AND CURRENT CARRIERS; IN SEMICONDUCTORS, THE ATOMIC-BOND MODEL; 1.1INTRODUCTION TO CRYSTALS; 1.1.1 Atomic Bonds; 1.1.2 Three-Dimensional Crystals; 1.1.3 Two-Dimensional Crystals: Graphene and Carbon Nanotubes; 1.2 CURRENT CARRIERS; 1.2.1 Two Types of Current Carriers in Semiconductors; 1.2.2 N•Type and P-Type Doping; 1.2.3 Electroneutrality Equation; 1.2.4 Electron and Hole Generation and Recombination in Thermal Equilibrium; 1.3 BASICS OF CRYSTAL GROWTH AND DOPING TECHNIQUES; 1.3.1 Crystal-Growth Techniques; 1.3.2 Doping Techniques; Summary; Problems; Review Questions; 2: THE ENERGY-BAND MODEL; 2.1 ELECTRONS AS WAVES; 2.1.1 De Broglie Relationship Between Particle and Wave Properties; 2.1.2 Wave Function and Wave Packet; 2.1.3 Schrodinger Equation; 2.2 ENERGY LEVELS IN ATOMS AND ENERGY BANDS IN CRYSTALS; 2.2.1 Atomic Structure; 2.2.2Energy Bands in Metals; 2.2.3 Energy Gap and Energy Bands in Semiconductors and Insulators; 12.3 ELECTRONS AND HOLES AS PARTICLES; 2.3.1 Effective Mass andReal E-k Diagrams; 2.3.2 The Question of Electron Size: The Uncertainty Principle; 2.3.3 Density of Electron States; 2.4 POPULATION OF ELECTRON STATES, CONCENTRATIONS OF; ELECTRONS A:'D HOLES; 2.4.1 Fermi-Dirac Distribution; 2.4.2 Maxwell-Boltzmann Approximation and Effective Density of States; 2.4.3 Fermi Potential and Doping; 2.4.4 Nonequilibrium Carrier Concentrations and Quasi-FermiLevels; Summary; Problems; Review Questions; 3: DRIFT 3.1 ENERGY BANDS WITH APPLIED ELECTRIC FIELD; 3.1.1 Energy-Band Presentation of Drift Current; 3.1.2 Resistance and Power Dissipation due to Carrier Scattering; 3.2 OHM'S LAW, SHEET RESISTANCE, AND CONDUCTIVITY; 3.2.1 Designing Integrated-Circuit Resistors;3.2.2 Differential Form of Ohm's Law; 3.2.3 Conductivity Ingredients; 3.3 CARRIER MOBILITY; 3.3.1 Thermal and Drift Velocities; 3.3.2 Mobility Definition; 3.3.3 Scattering Time and Scattering Cross Section; 3.3.4 Mathieson's Rule; °3.3.5 Hall Effect; Summary; Problems; Review Questions; 4: DlFFUSION; 4.1 DIFFUSION-CURRENT EQUATION; 4.2 DIFFUSION COEFFICIENT; 4.2.1 Einstein Relationship;L4.2.2 Haynes-Shockley Experiment; 4.2.3 Arrhenius Equation; 4.3 BASIC CONTINUITY EQUATION; Summary; Problems; Review Questions; 5: GENERATION AND RECOMBINATION; 5.1 GENERATION AND RECOMBINATION MECHANISMS; 5.2 GENERAL FORM OF THE CONTINUITY EQUATION; 5.2.1 Recombination and Generation Rates; 5.2.2 Minority-Carrier Lifetime; 5.2.3 Diffusion Length; 5.3 GENERATION AND RECOMBINATION PHYSICS AND SHOCKLEYREAD-; HALL (SRH) THEORY; 5.3.1 Capture and Emission Rates in Thermal Equilibrium; 5.3.2 Steady-State Equation for the Effective Thermal Generation/Recombination; Rate; 5.3.3 Special Cases; 5.3.4 Surface Generation and Recombination; Summary; Problems; Review Questions; PART II FUNDAMENTAL DEVICESTRUCTURES; 6: P-N JUNCTION; 6.1 P-N JUNCTION PRINCIPLES; 6.1.1 p-~ Junction in Thermal Equilibrium; 6.1.2 Reverse
- ISBN: 978-0-19-538803-9
- Editorial: Oxford University
- Encuadernacion: Cartoné
- Fecha Publicación: 01/05/2011
- Nº Volúmenes: 1
- Idioma: Inglés