Technology of gallium nitride crystal growth

This book deals with the important technological aspects of the growth of GaNsingle crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared. Summarizes the current state of the art of GaN growth technology Integrates materials science and physical aspects A reference work for researchers and engineers alike May serve as a study text for graduate students inmaterials sciences INDICE: Preface.- Development of the Gallium Nitride Market.- HVPE of GaN.- Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds.- HVPE at Hitachi Cable.- HVPE Technology.- High-Growth Rate MOCVD.- Ammonothermal Solution Growth.- High-Pressure Solution (HPS) Growth of Gallium Nitride.- Na Flux LPE.- Ga Flux LPE.- Optical Properties of GaN Substrates.- Structural Properties of GaN.

• ISBN: 978-3-642-04828-9
• Editorial: Springer
• Encuadernacion: Cartoné
• Páginas: 334
• Fecha Publicación: 15/01/2010
• Nº Volúmenes: 1
• Idioma: Inglés