Silicon carbide v. 2 Power devices and sensors

In 2008, the Fraunhofer Institute for Solar Energy Systems ISE realized a photovoltaic inverter with world record efficiency. The power transistors from the American manufacturer CREE work on the basis of silicon carbide. This easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This book prestigiously covers our current understanding of SiC and its applications. It is devoted to high power devices and reports on the development of Schottky barrier diodes and power MOSFETs, SiC sensors, MEMS and NEMS as well as circuit elements for high temperature applications. A substantial part concentrates on the discussion of power-device products and their challenges in industrial applications. Contributions cover circuit elements and high temperature applications, reliability aspects ofSchottky Diodes, advantages of SiC power devices, SiC-based electronics for the automotive industry and the application of transistors in PV-inverters.

• ISBN: 978-3-527-40997-6
• Editorial: Wiley-VCH
• Encuadernacion: Cartoné
• Páginas: 480
• Fecha Publicación: 21/10/2009
• Nº Volúmenes: 1
• Idioma: Inglés