Resistive Switching: From Fundamentals of Nanionic Redox Processes to Memristive Device Applications

With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in–depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self–contained book for materials scientists, electrical engineers and physicists dealing with memory research and development. INDICE: INTRODUCTION. . TRANSITION METAL OXIDES. Atomic Structures of Selected Binary, Ternary Oxides. Deposition Techniques. Thermodynamics of Oxidation, Ellingham Diagram. Electronic Structure and Conduction. Correlated Electrons. Ionic Conduction. . RESISTIVE SWITCHING. Device Structure. Unipolar Switching: Forming, Set/Reset Operations. Bipolar Switching: Forming, Set/Reset Operations. Coexistence of Unipolar/Bipolar Switching. Filamentary Switching and Atomic Force Microscopy Analysis. Interface Switching. Threshold and Memory Switching. Time Dependence of Set/Reset. Resistance Dependence of Set/Reset. . SWITCHING MECHANISMS AND MODELS. Unipolar Switching: Set/Reset Mechanisms and Models. Bipolar Switching: Set/Reset Mechanisms and Models. Modeling of Resistance Dependence (Filament Size and Gap). Modeling of Time Dependence. Modeling of Set Current Dependence. Overshoot and Parasitic Effects. Material Dependence and Universal Switching. . MEMORY RELIABILITY. Read Disturb and The Time–Voltage Dilemma. Data Retention. 1/f and Random Telegraph Signal Noise. Switching Variability and Set/Reset Algorithms. Reset Current Reduction. Set/Reset Instability. Cycling Endurance. . MEMORY CELL STRUCTURES. MIM Structures. Bilayered Structures. Lighting–Rod Structures. Contact RRAM. Complementary Resistance Switch (CRS). Multilevel Cells. Alternative Materials: OxRRAM, PoRRAM, CBRAM. Bottom–Up Approaches: Nanotubes, Nanowires and Self–Assembly. . MEMORY ARCHITECTURES. Crossbar Array. Diode Selectors. Transistor Selectors. 1T1R Architectures. CMOL. Scaling Issues (Series Resistance, Programming Cross Talk, 3D Stacking Issues). . LOGIC GATES. The Memristor. Crossbar Latch. Data Restoration. IMP Function. STDP in Memristor Gates. . CONCLUSIONS.

• ISBN: 978-3-527-33417-9
• Editorial: Wiley VCH
• Encuadernacion: Cartoné
• Páginas: 740
• Fecha Publicación: 13/01/2016
• Nº Volúmenes: 1
• Idioma: Inglés