Spin Transfer Torque Memory Devices - From Materials to STT-RAM Applications

Integrating the distinct knowledge for the magnetism as well as the silicon manufacturing community, this book provides the knowledge needed by both, resulting in a much–needed overview of the characteristics of perpendicular magnetic films and the materials which can be used for spin transfer torque applications. As such, STT is explained in detail, as are magnetic random access memories (MRAM), while a chapter on recent progress in STT–RAM rounds off the book. INDICE: INTRODUCTION. . PERPENDICULAR MAGNETIC FILMS. Magnetic Thin Films. (Co/Pt)n and (Co/Ni)n Multilayers. Rare–Earth/Transition–Metal Alloys. L10–ordered CoPt (or FePt) Alloys. . HALF METALS. Introduction. Electronic Structure and Spin–Polarization. Heat Treatment. Application. . SPIN TRANSFER TORQUE. Theoretic Prediction of STT. STT in Current–Perpendicular–to–Plane Spin–Valve s(SPP–SPVs). STT in Magnetic Tunnelling Junctions (MTJs). Reduction of the Critical Current of STT. . MAGNETIC RANDOM ACCESS MEMORY. MRAM and Spintronics. Design and Fabrication. Writing Technique. Reading Technique. Applications of MRAM. . RECENT PROGRESS IN STT–RAM. Structure of STT–RAM. Design and Fabrication. STT Writing Process in STT–RAM. Several Challenges.

• ISBN: 978-3-527-33454-4
• Editorial: Wiley VCH
• Encuadernacion: Cartoné
• Páginas: 400
• Fecha Publicación: 13/08/2015
• Nº Volúmenes: 1
• Idioma: Inglés