This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributorsReviews of the most important recent literatureClear illustrationsA broad view, including examination of defects in different semiconductors INDICE: 1. Electron and proton irradiation of Si Arne Nylandsted Larsen 2. Role of Defects in the Dopant Diffusion in Si Peter Pichler 3. Defective solid-phase epitaxial growth of Si Nicholas Rudawski 4. Defects in SiC Bengt Gunnar Svensson 5. Nanoindentation in Si and Ge Jim Williams 6. Point defects in ZnO Matthew D. McCluskey 7. Analytical Techniques for Electrically Active Defect Detection Eddy Simoen 8. Point Defects in GaN Michael A. Reshchikov 9. Ion implantation defects and shallow junctions in Si and Ge Enrico Napolitani 10. Surface and Defect States in Semiconductors Investigated by Surface Photovoltage Daniela Cavalcoli
- ISBN: 978-0-12-801935-1
- Editorial: Academic Press
- Encuadernacion: Cartoné
- Páginas: 300
- Fecha Publicación: 01/06/2015
- Nº Volúmenes: 1
- Idioma: Inglés